Memory properties of Ge quantum dots and rings MOS structure prepared by pulsed laser deposition
نویسندگان
چکیده
منابع مشابه
Memory Properties of Ge quantum dots and rings MOS structure prepared by Pulsed Laser Deposition
New memory structures using threshold shifting from charge stored in quantum dots (QDs) and quantum rings (QRs) of Germanium (Ge) are described. The QDs and QRs of Ge were prepared on a p-Si (100) matrix by means of pulsed laser deposition (PLD) using the droplet technique combined with rapid annealing. The perfect planar nanorings with welldefined sharp inner and outer edges were formed via an...
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This Article is brought to you for free and open access by the Electrical & Computer Engineering at ODU Digital Commons. It has been accepted for inclusion in Electrical & Computer Engineering Faculty Publications by an authorized administrator of ODU Digital Commons. For more information, please contact [email protected]. Repository Citation Hegazy, M. S. and Elsayed-Ali, H. E., "Growth o...
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در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2009
ISSN: 1742-6596
DOI: 10.1088/1742-6596/152/1/012020